TSM60NB1R4CH C5G
TSM60NB1R4CH C5G
Part Number TSM60NB1R4CH C5G Description MOSFET N-CHANNEL 600V 3A TO251 Package / Case TO-251-3 Short Leads, IPak, TO-251AAUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 600V 3A (Tc) 28.4W (Tc) Through Hole TO-251 (IPAK)
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TSM60NB1R4CH C5G - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TSM60NB1R4CH Standard Package 1875 Manufacturer Taiwan Semiconductor Corporation Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 3A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.4Ohm @ 900mA, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.12nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 257.3pF @ 100V FET Feature - Power Dissipation (Max) 28.4W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-251 (IPAK) Package / Case TO-251-3 Short Leads, IPak, TO-251AA
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